A. N. Pikhtin : rechercher sur Z-Library

Bertolotti, Mario, Bogdanov, Victor, Ferrari, Aldo, Jascow, Andrei, Nazorova, Natalia, Pikhtin, Alexander, Schirone, Luigi

Année:

2007

Langue:

english

Fichier:

PDF, 192 KB

english, 2007

Temperature dependence of the refractive index in semiconductors

Journal:

Journal of the Optical Society of America B

Année:

1990

Langue:

english

Fichier:

PDF, 433 KB

english, 1990

A highly UV-selective Schottky-barrier photodiode based on a Ag–GaP contact

R. Mientus, R. Wolf, B. Kloth, M. Protsch, A.N. Pikhtin

Journal:

Surface and Coatings Technology

Année:

1999

Langue:

english

Fichier:

PDF, 249 KB

english, 1999

Energy band structure and optical properties of CdSnP2

A. N. Pikhtin, V. N. Razbegaev, N. A. Goryunova, E. I. Leonov, V. M. Orlov, G. F. Karavaev, A. S. Poplavnoi, V. A. Chaldyshev

Journal:

Année:

1971

Langue:

english

Fichier:

PDF, 429 KB

english, 1971

The properties of InGaAsP/InP heterolasers with step-divergent waveguides

E. G. Golikova, V. A. Kureshov, A. Yu. Leshko, D. A. Livshits, A. V. Lyutetskii, D. N. Nikolaev, N. A. Pikhtin, Yu. A. Ryaboshtan, S. O. Slipchenko, I. S. Tarasov, N. V. Fetisova

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 43 KB

english, 2000

On the internal quantum efficiency and carrier ejection in InGaAsP/InP-based quantum-well lasers

A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, G. V. Skrynnikov, Z. N. Sokolova, I. S. Tarasov, N. V. Fetisova

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 66 KB

english, 2000

Internal quantum efficiency of stimulated emission of (λ=1.55 µm) InGaAsP/InP laser diodes

G. V. Skrynnikov, G. G. Zegrya, N. A. Pikhtin, S. O. Slipchenko, V. V. Shamakhov, I. S. Tarasov

Journal:

A. N. Pikhtin, H. H. Hegazy

Année:

2003

Langue:

english

Fichier:

PDF, 70 KB

english, 2003

Fundamental absorption edge of semiconductor alloys with the direct-gap energy-band structure

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 264 KB

english, 2009

Pulsed semiconductor lasers with higher optical strength of cavity output mirrors

A. N. Petrunov, A. A. Podoskin, I. S. Shashkin, S. O. Slipchenko, N. A. Pikhtin, T. A. Nalet, N. V. Fetisova, L. S. Vavilova, A. V. Lyutetskiy, P. A. Alekseev, A. N. Titkov, I. S. Tarasov

Journal:

IEEE Transactions on Electron Devices

Année:

2010

Langue:

english

Fichier:

PDF, 548 KB

english, 2010

Ag-GaP Schottky photodiodes for UV sensors

Pikhtin, A.N., Tarasov, S.A., Kloth, B.

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 273 KB

english, 2003

High-Power Pulse Semiconductor Laser-Thyristor Emitting at 900-nm Wavelength

Slipchenko, Sergey O., Podoskin, Aleksandr A., Rozhkov, Alexsander V., Pikhtin, Nikita A., Tarasov, Ilya S., Bagaev, Timur A., Zverkov, Mikhail V., Konyaev, Vadim P., Kurniavko, Yuriy V., Ladugin, Max

Journal:

IEEE Photonics Technology Letters

Année:

2013

Langue:

english

Fichier:

PDF, 469 KB

english, 2013

[IEEE Conference Digest. 2004 IEEE 19th International Semiconductor Laser Conference - Matsue-shi, Japan (21-25 Sept. 2004)] 2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. - 16 W CW output power from 100-μm aperture laser based on quantum well asymmetric heterostructure with lowest internal loss

Tarasov, I.S., Pikhtin, N.A., SIipchenko, S.O., Sokolova, Z.N., Vinokurov, D.A.

Année:

2004

Langue:

english

Fichier:

PDF, 169 KB

english, 2004

High-Power Laser Thyristors With High Injection Efficiency ( $\lambda =890$ –910 nm)

Slipchenko, Sergey O., Podoskin, Aleksandr A., Rozhkov, Alexsander V., Pikhtin, Nikita A., Tarasov, Ilya S., Bagaev, Timur A., Ladugin, Maxim A., Marmalyuk, Aleksandr A., Padalitsa, Anatoliy A., Simak

Journal:

IEEE Photonics Technology Letters

Année:

2015

Langue:

english

Fichier:

PDF, 903 KB

english, 2015

Generation of nanosecond and subnanosecond laser pulses by AlGaAs/GaAs laser-thyristor with narrow mesa stripe contact

Slipchenko, Sergey O., Podoskin, Aleksandr A., Soboleva, Olga S., Pikhtin, Nikita A., Bagaev, Timur A., Ladugin, Maxim A., Marmalyuk, Aleksandr A., Simakov, Vladimir A., Tarasov, Il’ya S.

Journal:

Optics Express

Année:

2016

Langue:

english

Fichier:

PDF, 4.23 MB

english, 2016

Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers

Sokolova, Z. N., Bakhvalov, K. V., Lyutetskiy, A. V., Pikhtin, N. A., Tarasov, I. S., Asryan, L. V.

Journal:

Chunikhin, A. A., Bazikyan, E. A., Pikhtin, N. A.

Année:

2016

Langue:

english

Fichier:

PDF, 227 KB

english, 2016

A laser unit for photodynamic therapy and robot-assisted microsurgery in dentistry

Journal:

Semiconductor Science and Technology

Année:

2017

Langue:

english

Fichier:

PDF, 414 KB

english, 2017

Continuous wave and pulse (2–100 ns) high power AlGaAs/GaAs laser diodes (1050 nm) based on high and low reflective 13th order DBR

Zolotarev, V V, Leshko, A Yu, Shamakhov, V V, Nikolaev, D N, Golovin, V S, Slipchenko, S O, Pikhtin, N A

Journal:

Année:

2020

Langue:

english

Fichier:

PDF, 941 KB

english, 2020

Continuous wave and pulse (2–100 ns) high power AlGaAs/GaAs laser diodes (1050 nm) based on high and low reflective 13th order DBR

Zolotarev, V V, Leshko, A Yu, Shamakhov, V V, Nikolaev, D N, Golovin, V S, Slipchenko, S O, Pikhtin, N A

Journal:

Semiconductor Science and Technology

Année:

2020

Fichier:

PDF, 941 KB

2020

Measurements of internal optical loss inside an operating laser diode

Veselov, D. A., Bobretsova, Yu. K., Leshko, A. Y., Shamakhov, V. V., Slipchenko, S. O., Pikhtin, N. A.

Journal:

Journal of Applied Physics

Année:

2019

Fichier:

PDF, 2.83 MB

2019

Simulation of Photoreflectance and Phototransmittance Excitonic Spectra Applied to Quantum Well Characterization

O. L. Lazarenkova, A. N. Pikhtin

Journal:

A.A. Kopylov, A.N. Pikhtin

Année:

1999

Langue:

english

Fichier:

PDF, 173 KB

english, 1999

Shallow impurity states and the free exciton binding energy in gallium phosphide

Journal:

Solid State Communications

Année:

1978

Langue:

english

Fichier:

PDF, 380 KB

english, 1978

Indirect exciton dispersion in III–V semiconductors: “Camel's back” in GaP

G.F. Glinskii, A.A. Kopylov, A.N. Pikhtin

Journal:

Solid State Communications

Année:

1979

Langue:

english

Fichier:

PDF, 297 KB

english, 1979

High power CW (16 W) and pulse (145 W) laser diodes based on quantum well heterostructures

Ilya S. Tarasov, Nikita A. Pikhtin, Sergey O. Slipchenko, Zinaida N. Sokolova, Dmitry A. Vinokurov, Kirill S. Borschev, Vladimir A. Kapitonov, Maxim A. Khomylev, Andrey Yu. Leshko, Andrey V. Lyutetski

Journal:

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy

Année:

2007

Langue:

english

Fichier:

PDF, 324 KB

english, 2007

Acousto-electron interaction in InGaAsP/InP laser heterostructures

L.A. Kulakova, A.V. Lyutetskiy, N.A. Pikhtin, I.S. Tarasov, E.Z. Yakhkind

Journal:

Ultrasonics

Année:

2006

Langue:

english

Fichier:

PDF, 241 KB

english, 2006

Simulation of excitonic spectra in electric field to characterize the quality of low dimensional structures

O.L., A.N. Pikhtin

Journal:

Applied Surface Science

Année:

2000

Langue:

english

Fichier:

PDF, 124 KB

english, 2000

Effect of electric field on the probability of optical transitions in InGaAs/GaAs quantum wells observed by photo- and electroreflectance methods

A. N. Pikhtin, O. S. Komkov, F. Bugge

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 234 KB

english, 2005

Excitonic effects and Franz–Keldysh oscillations in photoreflectance of ultrapure GaAs epilayers

O. S. Komkov, G. F. Glinskii, A. N. Pikhtin, Y. K. Ramgolam

Journal:

L. A. Marasina, A. N. Pikhtin, I. G. Pichugin, A. V. Solomonov

Année:

2009

Langue:

english

Fichier:

PDF, 348 KB

english, 2009

Cathodoluminescence of undoped and Zn-doped GaN epitaxial layers

Journal:

R. Stelgmann, W. N. Rasbegaev, A. N. Pikhtin

Année:

1976

Langue:

english

Fichier:

PDF, 470 KB

english, 1976

Radiative recombination in ZnN-doped GaAs1−xPx: N mixed crystals

Journal:

Année:

1987

Langue:

english

Fichier:

PDF, 441 KB

english, 1987

Determination of the nitrogen concentration in VPE-GaAs1–xPx

B. Kloth, M. V. Lupal, A. N. Pikhtin, C. E. Richter, R. Ries, R. Stegmann, M. Trapp

Journal:

A. N. Pikhtin, D. A. Yaskov

Année:

1987

Langue:

english

Fichier:

PDF, 479 KB

english, 1987

Infrared Absorption in Gallium Phosphide

Journal:

physica status solidi (b)

Année:

1969

Langue:

english

Fichier:

PDF, 534 KB

english, 1969

No-phonon and phonon-assisted exciton absorption in GaAs1 − x, Px with indirect energy gap

A. N. Pikhtin, V. N. Razbegaev, D. A. Yaskov

Journal:

physica status solidi (b)

Année:

1972

Langue:

english

Fichier:

PDF, 543 KB

english, 1972

Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures

P.V. Bulaev, A.A. Marmalyuk, A.A. Padalitsa, D.B. Nikitin, I.D. Zalevsky, V.A. Kapitonov, D.N. Nikolaev, N.A. Pikhtin, A.V. Lyutetskiy, I.S. Tarasov

Journal:

Journal of Crystal Growth

Année:

2003

Langue:

english

Fichier:

PDF, 104 KB

english, 2003

Excitonic effects in the photoconductivity of quantum-well GaxIn1−xAs/InP structures

M. F. Panov, A. N. Pikhtin

Journal:

Année:

1997

Langue:

english

Fichier:

PDF, 59 KB

english, 1997

Self-organizing nanoheterostructures in InGaAsP solid solutions

L. S. Vavilova, A. V. Ivanova, V. A. Kapitonov, A. V. Murashova, I. S. Tarasov, I. N. Arsent’ev, N. A. Bert, Yu. G. Musikhin, N. A. Pikhtin, N. N. Faleev

Journal:

O. L. Lazarenkova, A. N. Pikhtin

Année:

1998

Langue:

english

Fichier:

PDF, 150 KB

english, 1998

Energy spectrum of a nonideal quantum well in an electric field

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 162 KB

english, 1998

Spontaneously forming periodic composition-modulated InGaAsP structures

N. A. Bert, L. S. Vavilova, I. P. Ipatova, V. A. Kapitonov, A. V. Murashova, N. A. Pikhtin, A. A. Sitnikova, I. S. Tarasov, V. A. Shchukin

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 427 KB

english, 1999

Spontaneously assembling periodic composition-modulated InGaAsP structures

L. S. Vavilova, V. A. Kapitonov, A. V. Murashova, N. A. Pikhtin, I. S. Tarasov, I. P. Ipatova, V. A. Shchukin, N. A. Bert, A. A. Sitnikova

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 721 KB

english, 1999

Determination of the valence-band offset and its temperature dependence in isotypic heterojunctions p-AlxGa1−xAs/p-AlyGa1−yAs fromC-Vmeasurements

V. I. Zubkov, M. A. Mel’nik, A. V. Solomonov, A. N. Pikhtin, F. Bugge

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 73 KB

english, 1999

Photoluminescent and electroluminescent properties of spontaneously forming periodic InGaAsP structures

L. S. Vavilova, V. A. Kapitonov, D. A. Livshits, A. V. Lyutetskii, A. V. Murashova, N. A. Pikhtin, G. V. Skrynnikov, I. S. Tarasov

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 67 KB

english, 2000

Properties of wide-mesastripe InGaAsP/InP lasers

E. G. Golikova, V. A. Kureshov, A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, Yu. A. Ryaboshtan, G. A. Skrynnikov, I. S. Tarasov, Zh. I. Alferov

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 57 KB

english, 2000

Two-section InGaAsP/InP Fabry-Perot laser with a 12 nm tuning range

N. A. Pikhtin, A. Yu. Leshko, A. V. Lyutetskii, V. B. Khalfin, N. V. Shuvalova, Yu. V. Il’in, I. S. Tarasov

Journal:

A. N. Ivkin, A. N. Pikhtin

Année:

1997

Langue:

english

Fichier:

PDF, 106 KB

english, 1997

Phototransmittance involving bound excitons in GaP(N) and GaAs1−xPx(N).

Journal:

Année:

1998

Langue:

english

Fichier:

PDF, 80 KB

english, 1998

Multiwell laser heterostructures fabricated by liquid-phase epitaxy

A. Yu. Leshko, A. V. Lyutetskii, A. V. Murashova, N. A. Pikhtin, I. S. Tarasov, I. N. Arsent’ev, B. Ya. Ber, Yu. A. Kudryavtsev, Yu. V. Il’in, N. V. Fetisova

Journal:

L. Ya. Karachinskii, A. M. Georgievskii, N. A. Pikhtin, S. V. Zaitsev, I. S. Tarasov, P. S. Kop’ev

Année:

1998

Langue:

english

Fichier:

PDF, 72 KB

english, 1998

Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 63 KB

english, 1999

High-power broad-band single-mode InGaAsP/InP superluminescent diode

N. A. Pikhtin, Yu. V. Il’in, A. Yu. Leshko, A. V. Lyutetskii, A. L. Stankevich, I. S. Tarasov, N. V. Fetisova

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 47 KB

english, 1999

Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organometallic compounds

E. G. Golikova, V. A. Gorbylev, N. Yu. Davidyuk, V. A. Kureshov, A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, Yu. A. Ryaboshtan, V. A. Simakov, I. S. Tarasov, N. V. Fetisova

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 43 KB

english, 2000

Mesastripe single-mode separately bounded lasers based on InGaAsP/InP heterostructures obtained by VPE of organometallic compounds

E. G. Golikova, V. A. Gorbylev, Yu. V. Il’in, V. A. Kureshov, A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, Yu. A. Ryaboshtan, V. A. Simakov, I. S. Tarasov, E. A. Tret’yakova, N. V. Fetisova

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 52 KB

english, 2000

Threshold characteristics of λ=1.55 µm InGaAsP/InP heterolasers

G. G. Zegrya, N. A. Pikhtin, G. V. Skrynnikov, S. O. Slipchenko, I. S. Tarasov

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 96 KB

english, 2001

MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes

D. A. Vinokurov, V. A. Kapitonov, D. N. Nikolaev, A. L. Stankevich, A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, I. N. Arsent’ev, I. S. Tarasov

Journal: